triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 27 - 31 ghz 1w power amplifier TGA4509-EPU key features ? 22 db nominal gain @ 30 ghz ? 30 dbm nominal pout @ p1db ? 25% pae @ p1db ? -10 db nominal return loss ? built-in power detector ? 0.25-m mmw phemt 3mi ? bias conditions: vd = 4 - 6 v, idq = 420 ma ? chip dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in) fixtured measured performance bias conditions: vd = 6 v, id =420 ma 10 12 14 16 18 20 22 24 26 28 30 32 -12-9-6-3036912151821 pin (dbm) pout (dbm) & gain (db) 0 200 400 600 800 1000 ids (ma) gain pout ids data taken @ 30 ghz primary applications ? point to point radio ? point to multi-point radio ?lmds ? satellite ground terminal -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 25 26 27 28 29 30 31 32 33 34 frequency (ghz) sij (db) s21 s11 s22
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4509-EPU table ii electrical characteristics (t a = 25 o c, nominal) table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 7 v v - negative supply voltage range -5 v to 0 v |ig| gate current 35.2 ma i + positive supply current 930 ma 2/, 5 / p d power dissipation tbd p in input continuous wave power 22 dbm t ch operating channel temperature 150 c 3/, 4 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these values represent the maximum operable values of this device 2/ total current for the entire mmic 3/ these ratings apply to each individual fet 4/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ the maximum supply current from one side is 650 ma. from both sides, the maximum supply current is 930 ma. parameter units typical drain operating voltage v 6 quiescent current ma 420 small signal gain @ 30 ghz db 22 gain flatness db/50mhz 0.0660 input return loss (linear small signal) db -10 output return loss (linear small signal) db -10 reverse isolation db -40 cw output power @ p1db dbm 30 power added efficiency @ p1db % 25 p1db temperature coeff. tc (-40 to +85 c) db/deg c 0.0135
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. measured fixtured data bias conditions: vd = 6 v, id = 420 ma TGA4509-EPU 6 8 10 12 14 16 18 20 22 24 26 26 27 28 29 30 31 32 33 34 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 25 26 27 28 29 30 31 32 33 34 frequency (ghz) return loss (db) s11 s22
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4509-EPU measured fixtured data bias conditions: vd = 6 v, id = 420 ma 26 27 28 29 30 31 32 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 33 33.5 frequency (ghz) power (dbm) pout @ p1db (dbm) psat
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. notes: 1. connection to power det, ref diode shown. 2. 1 m f cap on gate & drain power supplies are lines required. 3. gate voltage can either be from one side or both sides. 4. drain voltage is required from both sides for id > 650 ma. output tfn 100pf 100pf vg 100pf vd vd (optional) 100pf vg (optional) 0.01 p f dq cap (opt.) gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram input tfn 0.01 p f 0.01 p f 0.01 p f 0.01 p f TGA4509-EPU power detector reference diode
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. on-chip diode functions as envelope detector external coupler and dc bias required tga4509 measured detector voltage offset vs output power with 20db coupler: vb=0.8v, f = 30ghz, coupler loss is uncalibrated, 10k w load 0.01 0.1 1 10 8 101214161820222426283032 pout (dbm) detector voltage (v) TGA4509-EPU external coupler (-20db) tga4509 rf out 50 : external dc bias video out (v det ) 10k : c=2pf
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4509-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information jan 17, 2005 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGA4509-EPU
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